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【3.3】 Technical Parameters Of Transistor Detector
This instrument can automatically identify and measure various
transistors.Including NPN and PNP transistors, N-channel and P-channel field
effect transistors, junction field effect transistors, diodes, double diodes,
thyristors, etc.,and passive components such as resistors, inductors,
capacitors, etc
Automatic detection of pin definitions
It can automatically parse the infrared code of the NEC protocol
Other functional modes: including circuit continuity test, 0~16V input voltage
measurement, PWM output, 0~24V Zener diode measurement, DS18B20
temperature sensor measurement, DHT11 temperature and humidity sensor
measurement, etc
Trigger type
Trigger level
Waveform freeze
Automatic
measurement
PWM output
Rising edge, falling edge
Adjustable, with indication
Yes (HOLD function)
Maximum, minimum, average, rms, peak-to-peak,
frequency, period, duty cycle
FRQ: 0～80KHz, Duty cycle: 0～100%, Amplitude: 5.0V
Triode
Category Scope Technical Parameter
*
Forward voltage
drop <5V
Forward Voltage Drop, Junction Capacitance,Reverse
Leakage Current ②
Diode
JFET
IGBT
MOSFET
0.01～4.5V
0.01～24V
(1-2-3 test area) forward voltage drop, reverse
breakdown voltage
(K-A-A test area) reverse breakdown voltage
Gate capacitance Cg, drain current Id at Vgs, protection
diode forward voltage drop Uf ④
Turn-on voltage Vt, gate capacitance Cg, drain-source
resistance Rds, protection diode forward voltage drop
Uf ④
Drain current Id at Vgs, protection diode forward
voltage drop Uf ④
Zener diode
FET③
PAGE
Magnification hfe, base-emitter voltage Ube, Ic/Ie,
collector-emitter reverse cut-off current Iceo, Ices,
protection diode forward voltage drop Uf ①
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